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| Product Bulletin OPB702 October 2000 Reflective Object Sensors Type OPB702, OPB702D, OPB702R Features *Focused for maximum sensitivity *Phototransistor (OPB702) or Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . . -40C to +85C Lead soldering temperature (1/16 inch [1.6 mm] from case for 5 sec. with soldering iron) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240C(2) Input Diode Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Peak Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1) Output Photosensor Collector-Emitter Voltage - OPB702 & OPB702R . . . . . . . . . . . . . . . . . . . . . . . . . 30 V OPB702D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V Emitter-Collector Voltage - OPB702 & OPB702D . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Power Dissipation - OPB702 & OPB702D & OPB702R . . . . . . . . . . . . . . . . 100 mW(1) NOTES: (1) Derate linearly 1.67 mW/C above 25C. (2) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. (3) d is the distance from the assembly face to the reflective surface. (4) Measured using Eastman Kodak gray card. The white side of the card is used as a 90% diffuse reflectance surface. Reference Eastman Kodak, Catalog #E152 7795. (5) All parameters tested using pulse techniques. (6) Lead spacing controlled at body egress. PRECAUTIONS: Exposure of the plastic body to chlorinated hydrocarbons and ketones such as thread lock and instant adhesive products will degrade the plastic body. Cleaning agents methanol and isopropanol are recommended. Spray or wipe do not submerge. Photodarlington (OPB702D) or Phototransistor with base-emitter resistor (OPB702R) *Low cost plastic housing Description The OPB702 family consists of an infrared emitting diode and a choice of NPN silicon phototransistor (OPB702), photodarlington (OPB702D), or base-emitter resistor for low light suppresion (OPB702R). The IR LED and phototransistor are mounted side-by-side on converging optical axes, in a black plastic housing. Both parts are constructed using either OP165 or OP265 series LEDs. The OPB702 uses and OP505 type. The OPB702D uses an OP535 type. The OPB702R uses an OP705. Custom electrical, wire or cabling is available. Contact your local representative or Optek for more information. Visit our website at www.optekinc.com or email us at sensors@optekinc.com Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 Type OPB702 Electrical Characteristics (TA = 25C unless otherwise noted) SYMBOL Input Diode VF IR V(BR)CEO V(BR)ECO I CEO Coupled IC(ON) VCE(SAT) PARAMETER Forward Voltage Reverse Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current On-State Collector Current Collector-Emitter Saturation Voltage MIN MAX UNITS 1.8 100 30 5.0 100 V A V V nA IF = 20 mA VR = 2.0 V TEST CONDITIONS Output Phototransistor IC = 100 A, I F = 0, Ee = 0 IE = 100 A, I F = 0, Ee = 0 VCE = 10 V, I F = 0, Ee = 0 VCE = 5.0 V, IF = 40 mA, d = 0.150"(3.81 mm)(3)(4) IC = 250 A, I F = 40 mA, d = 0.150"(3.81 mm)(3)(4) 50 0.40 A V Optek re serves the right to make changes at any time in order to im prove design and to supply the best product possible Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 Type OPB702D Electrical Characteristics (TA = 25C unless otherwise noted) SYMBOL Input Diode VF IR V(BR)CEO V(BR)ECO I CEO Coupled IC(ON) VCE(SAT) PARAMETER Forward Voltage Reverse Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current On-State Collector Current Collector-Emitter Saturation Voltage MIN MAX UNITS 1.8 100 15.0 5.0 250 V A V V nA IF = 20 mA VR = 2.0 V TEST CONDITIONS Output Phototransistor IC = 1 mA, I F = 0 , Ee = 0 IE = 100 A, IF = 0, Ee = 0 VCE = 10.0 V, I F = 0, Ee = 0 VCE = 5.0 V, I F = 40 mA, d = 0.150"(3.81 mm) (3)(4) IC = 400 A, I F = 40 mA, d = 0.150"(3.81 mm) (3)(4) 2.0 1.10 mA V Type OPB702R Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL Input Diode VF IR V(BR)CEO I ECO I CEO Coupled IC(ON) VCE(SAT) On-State Collector Current Collector-Emitter Saturation Voltage 50 0.40 A V VCE = 5.0 V, I F = 40 mA, d = 0.150"(3.81 mm) (3)(4) IC = 250 A, I F = 40 mA, (3)(4) d = 0.150"(3.81 mm) Forward Voltage Reverse Current Collector-Emitter Breakdown Voltage Emitter-Reverse Current Collector-Emitter Leakage Current 30 100 100 1.8 100 V A V A nA IF = 20 mA VR = 2.0 V IC = 100 A, I F = 0, E e = 0 VEC = 0.4 V, I F = 0, Ee = 0 VCE = 10.0 V, I F = 0, Ee = 0 PARAMETER MIN MAX UNITS TEST CONDITIONS Output Phototransistor |
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